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Effects of in situ O-2 plasma treatment on OFF-state leakage and reliability in metal-gate/high-k dielectric MOSFETs SCIE SCOPUS
- Title
- Effects of in situ O-2 plasma treatment on OFF-state leakage and reliability in metal-gate/high-k dielectric MOSFETs
- Authors
- Lee, KT; Kang, CY; Ju, BS; Choi, R; Min, KS; Yoo, OS; Lee, BH; Jammy, R; Lee, JC; Lee, HD; Jeong, YH
- Date Issued
- 2008-06
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- The effects of in situ O-2 plasma treatment on device characteristics and reliability of metal-gate/high-k devices are investigated systematically. It was found that the O-2 plasma treatment can be employed for mitigating the formation of a leakage path between the high-k dielectric and the capping nitride layer. It also did not change the threshold voltage (V-th), carrier mobility, or equivalent oxide thickness. Compared with the control samples, the O-2 plasma-treated samples achieved a 20-times lower OFF-state current and enhanced hot-carrier-injection stress immunity.
- Keywords
- gate-induced drain leakage (GIDL); hot-carrier reliability; in situ O-2 plasma; metal-gate/high-k; plasma-induced damage (PID); OXIDES
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 29, no. 6, page. 565 - 567, 2008-06
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Related Researcher
- 정윤하JEONG, YOON HA
- Dept of Electrical Enginrg