Highly efficient class-F GaNHEMT doherty amplifier for WCDMA applications
SCIE
SCOPUS
- Title
- Highly efficient class-F GaNHEMT doherty amplifier for WCDMA applications
- Authors
- Lee, YS; Lee, MW; Jeong, YH
- Date Issued
- 2008-09
- Publisher
- JOHN WILEY & SONS INC
- Abstract
- This article presents a high-efficiency GaN HEMT class-F Doherty amplifier for 2.14-GHz WCDMA applications. From the measured results, the proposed amplifier shows the PAE and drain efficiency of 56.3 and 60.1% at 39.5 dBm (6-dB back-off power from Psat) for a single tone. For a one-carrier WCDMA signal, the CFDA shows the PAE of 44.9% with an ACLR of -22.1 dBc (+/-2.5 MHz offset) at 36.5 dBm, while an ACLR of -35.4 dBc with the PAE of 39.7% is achieved for the CEDA after linearity optimization. (C) 2008 Wiley Periodicals, Inc.
- Keywords
- class-F; Doherty amplifier; efficiency; gallium nitride (GaN); POWER-AMPLIFIERS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22630
- DOI
- 10.1002/MOP.23700
- ISSN
- 0895-2477
- Article Type
- Article
- Citation
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 50, no. 9, page. 2328 - 2331, 2008-09
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.