Effect of interfacial layer thickness on the formation of interface dipole in metal/tris(8-hydroxyquinoline) aluminum interface
SCIE
SCOPUS
- Title
- Effect of interfacial layer thickness on the formation of interface dipole in metal/tris(8-hydroxyquinoline) aluminum interface
- Authors
- Kim, SY; Lee, JL
- Date Issued
- 2008-10
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- We determined the interface dipole energies between interfacial layers with different thicknesses coated on indium tin oxides (ITOs) and tris(8-hydroxyquinoline) aluminum using ultraviolet and synchrotron radiation photoemission spectroscopy. After O-2 plasma treatment on 20-nm thick metal coated ITO, the work function and interface dipole energy increased. In 2-nm thick metal coated ITO, no change in the interface dipole energy was found though the work function increased. According to the valence band spectra, 2-nm thick metals are fully oxidized, but 20-nm thick metals are partially oxidized after O-2 plasma treatment. Therefore, it is considered that the contribution of the surface dipole by the deposition of Alq(3) on 2-nm thick metal is lower, resulting in a lower interface dipole. Thus, the thickness of interfacial layer has a great impact on the formation of interface dipole. (C) 2008 Elsevier B.V. All rights reserved.
- Keywords
- interface dipole; Alq(3) synchrotron radiation photoemission spectroscopy; work function; organic light emitting diodes; ENERGY-LEVEL ALIGNMENT; PHOTOEMISSION-SPECTROSCOPY; ORGANIC/METAL INTERFACES; CONJUGATED POLYMERS; METAL; FILMS; SEMICONDUCTORS; PENTACENE; DEVICES; OXIDE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22519
- DOI
- 10.1016/j.orgel.2008.04.010
- ISSN
- 1566-1199
- Article Type
- Article
- Citation
- ORGANIC ELECTRONICS, vol. 9, no. 5, page. 678 - 686, 2008-10
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.