A 1-GHz GaNHEMT based class-E power amplifier with 80% efficiency

Abstract

This article reports a highly efficient 1-GHz closs-E power amplifier based on a GaN HEMT. The compensation elements with a series capacitor and a shunt inductor are used to compensate for the internal par. asitic components of the packaged transistor To improve output power and efficiency by suppressing harmonic powers, an output matching circuit using the transmission lines is used. The peak PAE and drain efficiency of 79.2 and 80.4% with a power gain of 18.14 dB is achieved at an output power of 41.14 dBm jbr a continuous wave. (C) 2008 Wiley Periodicals, Inc.