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Cited 12 time in webofscience Cited 11 time in scopus
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Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayers SCIE SCOPUS

Title
Improvement of the contact resistance between ITO and pentacene using various metal-oxide interlayers
Authors
Kim, HSohn, SJung, DMaeng, WJKim, HKim, TSHahn, JLee, SYi, YCho, MH
Date Issued
2008-12
Publisher
ELSEVIER SCIENCE BV
Abstract
Ultra-thin Al2O3, Ta2O5, and TiO2 films were deposited on the indium tin oxide (ITO) surfaces in organic thin film transistors using the atomic layer deposition (ALD) process at room temperature, and the contact resistance was significantly improved with the increase of the dielectric constant of the interlayer. The electronic band diagrams of the pentacene/ITO structures after ALD treatment on ITO surface with various metal-oxides were measured using in situ ultra-violet photoelectron spectroscopy during the step-by-step deposition of pentacene, and these results explained the decrease of the hole injection barriers and the resulting improvement of the contact resistance between pentacene/ITO interface. (C) 2008 Elsevier B.V. All rights reserved.
Keywords
Organic thin film transistors; Contact resistance; Metal oxide; Photoelectron spectroscopy; INDIUM-TIN-OXIDE; LIGHT-EMITTING-DIODES; PHOTOEMISSION-SPECTROSCOPY; TRANSISTORS; SURFACES; DEVICES; ANODES
URI
https://oasis.postech.ac.kr/handle/2014.oak/22398
DOI
10.1016/j.orgel.2008.08.008
ISSN
1566-1199
Article Type
Article
Citation
ORGANIC ELECTRONICS, vol. 9, no. 6, page. 1140 - 1145, 2008-12
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김형준KIM, HYUNGJUN
Dept of Materials Science & Enginrg
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