ALINAS/INP DELTA-DOPED CHANNEL FIELD-EFFECT TRANSISTOR GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
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SCOPUS
- Title
- ALINAS/INP DELTA-DOPED CHANNEL FIELD-EFFECT TRANSISTOR GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
- Authors
- BHAT, R; CANEAU, C; HAYES, JR; HONG, WP; JEONG, DH; JEONG, YH
- Date Issued
- 1992-02-01
- Publisher
- JAPAN J APPLIED PHYSICS
- Abstract
- We report on organometallic chemical vapor deposition (OMCVD)-grown AlInAs/InP field effect transistors (EET's), employing a delta-doped channel. The EET's, having a gate length of 1.0-mu-m, demonstrated excellent saturation characteristics and a broad plateau of transconductance around a peak value of 210 mS/mm. The transistors were also highly stable with no hysteresis or long-term drain current drift being observed.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22209
- DOI
- 10.1143/JJAP.31.L66
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, vol. 31, no. 2A, page. L66 - L67, 1992-02-01
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