SYNTHESIS AND TRANSPORT-PROPERTIES OF LA2-XSRXCUO4 THIN-FILMS DEPOSITED BY LASER ABLATION
SCIE
SCOPUS
- Title
- SYNTHESIS AND TRANSPORT-PROPERTIES OF LA2-XSRXCUO4 THIN-FILMS DEPOSITED BY LASER ABLATION
- Authors
- JO, W; KHIM, ZG; KIM, YK; KO, DK; NOH, H; NOH, TW; YI, GC
- Date Issued
- 1992-05-10
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- La2-xSrxCuO4 high-T(c) thin films are fabricated in situ using second harmonics of a pulsed Nd:YAG laser. Effects of the growth parameters, such as substrate temperature and oxygen pressure, on the physical properties of the films are investigated with resistance and X-ray diffractometry measurements. The films deposited on SrTiO3 (100) and MgO (100) substrates have zero resistance transition temperatures around 22 K. Most grains in these films are aligned with their c-axes perpendicular to the substrates. The current-voltage (I-V) characteristics of a patterned La2-xSrxCuO4 thin film are measured at various temperatures near T(c). From the I-V characteristic curves, it is found that the measured critical current density (J(c)) follows a power law J(c) is-proportional-to (1-T/T(c))n with n approximately 1.5. Also, the behaviors of the I-V curves are discussed in terms of the scaling theory of the vortex-glass model.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/22191
- DOI
- 10.1016/S0921-4534(05)80007-3
- ISSN
- 0921-4534
- Article Type
- Article
- Citation
- PHYSICA C, vol. 194, no. 3-4, page. 293 - 300, 1992-05-10
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- There are no files associated with this item.
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