POWER-GAIN AND F(MAX) EQUATIONS BASED ON THE T-EQUIVALENT CIRCUIT OF HIGH-FREQUENCY BIPOLAR-TRANSISTORS

Abstract

Analytical expressions for the maximum available power gain and f(max) of a high-frequency bipolar transistor are derived from the simple T equivalent circuit model of bipolar transistors. These equations predict the power gain of the state-of-the-art microwave bipolar transistor very well and show that f(max) and power gain are proportional to the transconductance and decrease as the resistance-capacitance charging time and current gain delay time increase. (C) 1994 John Wiley & Sons, Inc.