1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with a noise corner frequency below 1 kHz
SCIE
- Title
- 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with a noise corner frequency below 1 kHz
- Authors
- Shin, JH; Lee, JW; Suh, YS; Kim, BM
- Date Issued
- 1996-01
- Publisher
- IOP PUBLISHING LTD
- Abstract
- The internal low-frequency noise sources of AlGaAs/GaAs HBT's are related to the detailed epi-layer structure as well as surface recombination velocity fluctuation at the extrinsic GaAs base surface. HBT's with a large emitter size of 120 x 120 mu m(2) are fabricated on abrupt emitter-base junction materials without undoped spacer, and the HBT's exhibit an internal noise corner frequency of 100 Hz, which is much lower than about 100 kHz of conventional AlGaAs/GaAs HBT's. The existence of resistance fluctuation 1/f noise is clearly verified by the simple comparison of collector current noise spectra with the varying base termination. It is found that, at a high emitter-base bias, the resistance fluctuation 1/f noise becomes dominant for shorted base-emitter termination, but the internal 1/f noise dominant for open base. To improve the low-frequency noise characteristics for a practical small feature size HBT, device design rules including resistance fluctuation are discussed.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21663
- ISSN
- 0951-3248
- Article Type
- Article
- Citation
- INSTITUTE OF PHYSICS CONFERENCE SERIES, vol. 145, page. 655 - 660, 1996-01
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- There are no files associated with this item.
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