1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with a noise corner frequency below 1 kHz
SCIE
SCOPUS
- Title
- 1/f noise characteristics of AlGaAs/GaAs heterojunction bipolar transistor with a noise corner frequency below 1 kHz
- Authors
- Shin, JH; Lee, JW; Suh, YS; Kim, BM
- Date Issued
- 1996-02
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- To reduce the low-frequency noise, HBT's with a large emitter size of 120 x 120 mu m(2) are fabricated on abrupt emitter-base junction materials without undoped spacer. The HBT's exhibit an internal noise corner frequency of 100 Hz, which is much lower than about 100 kHz of conventional AlGaAs/GaAs HBT's, From the very low noise HBT's, the existence of resistance fluctuation 1/f noise is clearly verified by the simple comparison of collector current noise spectra with different base terminations. It is found that, at a high emitter-base forward bias, the resistance fluctuation 1/f noise becomes dominant for shorted base-emitter termination, but the internal 1/f noise dominant for open base. Device design rules for low noise small-feature size HBT, including resistance fluctuation, are discussed.
- Keywords
- TRANSPORT; HBTS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21639
- DOI
- 10.1109/55.484125
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 17, no. 2, page. 65 - 68, 1996-02
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- There are no files associated with this item.
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