Passivation effect of (NH4)(2)S-x treatment on GaAs surface before photo-resist and O-2 processes
SCIE
SCOPUS
- Title
- Passivation effect of (NH4)(2)S-x treatment on GaAs surface before photo-resist and O-2 processes
- Authors
- Suh, KS; Lee, JL; Park, HH; Kim, CH; Lee, JJ; Nam, KS
- Date Issued
- 1996-02
- Publisher
- ELSEVIER SCIENCE SA
- Abstract
- Surface properties of GaAs passivated with (NH4)(2)S-x solution have been analyzed in GaAs wafer and photo-resist-treated GaAs using X-ray photoelectron spectroscopy. Sulfur treatment on GaAs surface results in the formation of S-Ga and S-As bunds, which remain after successive rinsing for 1 min in DI water. After oxygen plasma treatment with the HCl-treated sample, the GaAs sur face is converted to an As-rich surface, namely, arsenic composition is higher than gallium composition. Meanwhile, the compositions or gallium and arsenic keep almost constant even after oxygen plasma treatment of the sulfidation-treated sample. This indicates that As-S and Ga-S bonds are revealed to resist the oxidation of the surface. Through in-situ annealing under UHV condition, it is found that the Ga-O bond is thermally stable, but the As-S bond unstable.
- Keywords
- X-ray photoelectron spectroscopy; thermal stability; passivation effects; gallium arsenide; HYDROGEN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21580
- DOI
- 10.1016/0921-5107(95)01480-2
- ISSN
- 0921-5107
- Article Type
- Article
- Citation
- MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, vol. 37, no. 1-3, page. 172 - 176, 1996-02
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