PHOTOEMISSION STUDY FOR MG/SI(111)1X1 SURFACE
SCIE
SCOPUS
- Title
- PHOTOEMISSION STUDY FOR MG/SI(111)1X1 SURFACE
- Authors
- An, KS; Park, RJ; Kim, JS; Park, CY; Kim, CY; Chung, JW; Kinoshita, T; Kakizaki, A
- Date Issued
- 1996-05
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- The interface and silicide formation on Si(111)7x7 surface at 300 degrees C by Mg deposition was studied using low energy electron diffraction and synchrotron radiation photoelectron emission spectroscopy. At 300 degrees C only Mg/Si(111)1x1 structure was observed, which is different structure from the Mg/Si(111)1x1 surface formed at room temperature. A disordered Mg film was formed for further Mg deposition. We observed that the thin silicide layer between Mg film and Si substrate play a role as interdiffusion barrier for Mg atoms.
- Keywords
- SYSTEM
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21523
- DOI
- 10.1016/0368-2048(96)02947-7
- ISSN
- 0368-2048
- Article Type
- Article
- Citation
- JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, vol. 80, page. 165 - 168, 1996-05
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