A simple and accurate MESFET channel-current model including bias-dependent dispersion and thermal phenomena
SCIE
SCOPUS
- Title
- A simple and accurate MESFET channel-current model including bias-dependent dispersion and thermal phenomena
- Authors
- Roh, TM; Kim, Y; Suh, Y; Park, WS; Kim, B
- Date Issued
- 1997-08
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- A new channel-current model of GaAs MESFET suitable for applications to microwave computer-aided design (CAD) has been developed. This model includes the frequency-dispersion effects due to traps and thermal effects. The model parameters are extracted from pulsed I-V measurements at several ambient temperature and quiescent bias points. This model is verified by simulating nonlinear circuits, such as a power amplifier and a mixer.
- Keywords
- FREQUENCY DISPERSION; GAAS-MESFETS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21243
- DOI
- 10.1109/22.618416
- ISSN
- 0018-9480
- Article Type
- Article
- Citation
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, vol. 45, no. 8, page. 1252 - 1255, 1997-08
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- There are no files associated with this item.
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