Structural characterization of AlN thin film deposited on a single crystal of Al2O3(0001) substrate
SCIE
SCOPUS
- Title
- Structural characterization of AlN thin film deposited on a single crystal of Al2O3(0001) substrate
- Authors
- Kim, KH; Chang, CH; Koo, YM
- Date Issued
- 1998-02
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- The structure of an AIN thin film deposited on an Al2O3 substrate was examined using symmetric and grazing incident X-ray diffraction (CID). Line profile analysis was applied to obtain quantitative structural information from a single peak. The orientational relationship between the thin film and the substrate is AIN(0001)parallel to Al2O3(0001) and AIN[10 (1) over bar 0]parallel to Al2O3[11 (2) over bar 0]. A disordered arrangement is observed inside of the mosaic block of which the collective effect may cause macroscopic residual stresses in the film. (C) 1998 Elsevier Science B.V.
- Keywords
- GID (grazing incidence X-ray diffraction); AlN thin film; Al2O3 substrate; line profile analysis; orientational relationship; X-RAY-DIFFRACTION; SAPPHIRE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21143
- DOI
- 10.1016/S0167-577X(97)00127-4
- ISSN
- 0167-577X
- Article Type
- Article
- Citation
- MATERIALS LETTERS, vol. 34, no. 1-2, page. 19 - 22, 1998-02
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