Effect of H-2 and N-2 in the remote plasma enhanced metal organic chemical vapor deposition of TiN from tetrakis-diethyl-amido-titanium
SCIE
SCOPUS
- Title
- Effect of H-2 and N-2 in the remote plasma enhanced metal organic chemical vapor deposition of TiN from tetrakis-diethyl-amido-titanium
- Authors
- Yun, JY; Rhee, SW
- Date Issued
- 1998-01-14
- Publisher
- ELSEVIER SCIENCE SA
- Abstract
- The effect of H-2 and N-2 in the plasma in the remote plasma enhanced metal organic chemical vapor deposition (MOCVD) of TiN from tetratkis-diethyl-amido-titanium (TDEAT) was studied. The growth rate with H-2 in the plasma is about four times higher than that with N-2 in the plasma and both processes required similar activation energies. 9.70 and 9.33 kcal/mol, respectively. Carbon was incorporated as TiC and hydrocarbons in the TiN film and the fraction of carbon as TiC phase was higher using H-2 plasma. The film deposited with H-2 in the plasma had a lower resistivity due to the lower level of carbon incorporation in the film. The surface of the film deposited with N-2 in the plasma was rougher. It was believed that hydrogen radicals reacted with nitrogen atoms in TDEAT and produced Ti-rich film with lower carbon contents while nitrogen radicals produced films containing much more hydrocarbon. (C) 1998 Elsevier Science S.A.
- Keywords
- chemical vapour deposition (CVD); organometallic vapour deposition; titanium nitride; THIN-FILMS; BARRIER; NITRIDE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/21136
- DOI
- 10.1016/S0040-6090(97)00459-8
- ISSN
- 0040-6090
- Article Type
- Article
- Citation
- THIN SOLID FILMS, vol. 312, no. 1-2, page. 24 - 26, 1998-01-14
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