(hfac)Cu(I)(MP) (hfac=hexafluoroacetylacetonate, MP=4-methyl-1pentene) and (hfac)Cu(I)(DMB) (DMB=3,3-dimethyl-1-butene) for the chemical vapor deposition of copper film

Abstract

New organometallic precursors for the metal organic chemical vapor deposition (MOCVD) of copper, (hfac)Cu(I)(MP) (hfac = hexafluoroacetylacetonate, MP = 4-methyl-1-pentene) and (hfac)Cu(I)(DMB) (DMB = 3,3-dimethyl-1-butene) were studied. Copper films could be deposited at the precursor vaporization temperature of 45 and 35 degrees C. The deposition rate was about four to seven times higher than previously reported precursors such as (hfac)Cu(VTMS) (VTMS = vinyltrimethylsilane), (hfac)Cu(ATMS) (ATMS = allyltrimethylsilane) and (hfac)Cu(VCH) (VCH = vinylcyclohexane). The copper films deposited from these two precursors had a resistivity of about 2.0 mu Omega cm in the deposition temperature range of 150 to 200 degrees C. (C) 1999 Elsevier Science S.A. All rights reserved.