Metalorganic chemical vapor deposition of aluminum from tetramethylethylenediamine alane

Abstract

Tetramethylethylenediamine alane (TMEDAA) was synthesized by ligand displacement reaction of dimethylethylamine alane (DMEAA) with N,N,N'N'-tetramethylethylendiamine (TMEDA), and the chemical vapor deposition of aluminum film from TMEDAA in the temperature range of 140-260 degrees C has been studied. The maximum deposition rate of Al film from TMEDAA was 140 nm/min at 210 degrees C and the apparent activation energy over a substrate temperature range of 140-210 degrees C is about 58.6 kJ/mol. Al films were deposited on TiN/Si substrate and electrical resistivity values in the range 5-35 mu Omega cm were obtained. The incorporation of carbon and oxygen, and surface roughness were increased as the substrate temperature was increased. The Al films with a preferred orientation of (111) were obtained over a wide range of substrate temperature.