AFM study of SINx : H surfaces treated by hydrogen plasma: modification of morphological and scaling characteristics
SCIE
SCOPUS
- Title
- AFM study of SINx : H surfaces treated by hydrogen plasma: modification of morphological and scaling characteristics
- Authors
- Park, YB; Rhee, SW
- Date Issued
- 2001-03-15
- Publisher
- ELSEVIER SCIENCE SA
- Abstract
- Exposing silicon nitride surfaces to hydrogen plasma prior to low temperature microcrystalline-si deposition is an effective way of modifying surfaces to improve wettability and surface cleanliness. Atomic force microscopy (AFM) and Auger electron spectroscopy (AES) showed a delicate change in the morphology and a clear increase in nucleation resulting from the modification and cleaning effect of the SiNx:H surface by H-2 plasma exposure. The surface roughness correlation function measured by AFM has been shown to be in good agreement with a simple model from which the roughness exponent and lateral sizes of mountains and valleys in the surface can be deduced. (C) 2001 Elsevier Science B.V. All rights reserved.
- Keywords
- AFM; scaling; surface morphology; hydrogen plasma; CHEMICAL-VAPOR-DEPOSITION; SCANNING-TUNNELING-MICROSCOPY; SILICON FILMS; ROUGHNESS; GROWTH; INSITU
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20999
- DOI
- 10.1016/S0257-8972(00)01098-7
- ISSN
- 0257-8972
- Article Type
- Article
- Citation
- SURFACE & COATINGS TECHNOLOGY, vol. 137, no. 2-3, page. 265 - 269, 2001-03-15
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- There are no files associated with this item.
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