Structure and electrical properties of Ba1-xSrxTiO3 (BST) thin films fabricated by sol-gel method
SCIE
SCOPUS
- Title
- Structure and electrical properties of Ba1-xSrxTiO3 (BST) thin films fabricated by sol-gel method
- Authors
- Soo-Ik jang; Jang, HM
- Date Issued
- 1998-02
- Publisher
- KOREAN PHYSICAL SOC
- Abstract
- Thin films of Ba0.5Sr0.5TiO3 were fabricated on the RuO2/Ru/SiO2/Si substrate by the spin coating of the multicomponent sol prepared using metal alkoxides. Boron alkoxide was intentionally introduced to establish a better microstructure and to reduce the leakage current. AFM study indicated that a crack-free uniform microstructure having a smooth surface was gradually developed with increasing boron content. The relative dielectric permittivity of the 250 nm-thick BST thin films fired at 700 degrees C decreased with increasing content of boron, from 420 for the undoped film to 190 for the 10 mol% boron-added film at 1 MHz. The leakage current density (J) also decreased with the amount of boron added. The leakage current for the applied voltage greater than 1 V showed a linear variation of logJ with E-1/2 at room temperature, suggesting that the interface-controlled Schottky emission was the dominant conduction process for the BST thin films fabricated on the RuO2 electrode.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20852
- ISSN
- 0374-4884
- Article Type
- Article
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 32, page. S1547 - S1549, 1998-02
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