Effects of hydrogenated amorphous carbon interlayer on diamond nucleation
SCIE
SCOPUS
- Title
- Effects of hydrogenated amorphous carbon interlayer on diamond nucleation
- Authors
- Yang, WS; Kim, TS; Je, JH
- Date Issued
- 1998-03
- Publisher
- MATERIALS RESEARCH SOCIETY
- Abstract
- Diamond was deposited at 850 degrees C by microwave plasma chemical vapor deposition (CVD) on the interlayers with various intensity ratios (I-D/I-G) Of the D band (similar to 1400 cm(-1)) to the G band (similar to 1570 cm(-1)) in the Raman spectra, Diamond could be grown only on the interlayers with higher I-D/I-G (greater than or equal to 1.95), and N-d was slightly increased to 3 X 10(6)/cm(2) with I-D/I-G. The predeposition at 350 degrees C, which decreased the full-width at half-maximum of the broad D band, further increased N-d to 5 X 10(7)/cm(2). With 300 Angstrom Pt overlayer on the interlayer, N-d was much more enhanced to 8 X 10(7)/cm(2). We suggest the sp(3) bonded carbon clusters within the interlayer contribute to diamond nucleation, but they should be survived against atomic hydrogen etching during diamond deposition by increasing the sp(3)/sp(2) ratio, by increasing the degree in clustering, or by protecting them with overlayer.
- Keywords
- CHEMICAL-VAPOR-DEPOSITION; BIAS-ENHANCED NUCLEATION; MICROWAVE-PLASMA; LOW-PRESSURE; PRETREATMENT PROCESS; RAMAN-SCATTERING; THIN-FILMS; GROWTH; SILICON; PARTICLES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20811
- DOI
- 10.1557/JMR.1998.0076
- ISSN
- 0884-2914
- Article Type
- Article
- Citation
- JOURNAL OF MATERIALS RESEARCH, vol. 13, no. 3, page. 596 - 603, 1998-03
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- There are no files associated with this item.
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