Charge pumping investigations on parasitic regions in polysilicon TFT
SCIE
SCOPUS
- Title
- Charge pumping investigations on parasitic regions in polysilicon TFT
- Authors
- Kim, O; Kim, KJ
- Date Issued
- 1998-04-16
- Publisher
- IEE-INST ELEC ENG
- Abstract
- By comparing with the static I-V characteristics in polysilicon TFTs, it was found that the charge pumping current has four components that arise from the main channel, the channel edge and two overlap regions near the n(+) and p(+) contacts. ECR hydrogenation effectively passivates the trap states in the overlap regions.
- Keywords
- TRANSISTORS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20789
- DOI
- 10.1049/el:19980527
- ISSN
- 0013-5194
- Article Type
- Article
- Citation
- ELECTRONICS LETTERS, vol. 34, no. 8, page. 809 - 811, 1998-04-16
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- There are no files associated with this item.
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