Enhanced current-voltage characteristics of Al0.25Ga0.75As/In0.25Ga0.75As/GaAs P-HEMTs using an inverted double channel structure
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SCOPUS
- Title
- Enhanced current-voltage characteristics of Al0.25Ga0.75As/In0.25Ga0.75As/GaAs P-HEMTs using an inverted double channel structure
- Authors
- Ahn, KH; Jeon, YJ; Jeong, YH; Yun, CE; Pyo, HM
- Date Issued
- 1998-03
- Publisher
- JAPAN J APPLIED PHYSICS
- Abstract
- An inverted double channel Al0.25Ga0.75As/In0.25Ga0.75As/GaAs pseudomorphic high electron mobility transistor (PHEMT) grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) has been demonstrated for the first time. The inverted double channel heterostructure shows a high two-dimensional electron gas (2-DEG) concentration of 4.53 x 10(12)cm(-2) along with a large mobility of 5010 cm(2)/Vs at 300 K, respectively. The fabricated P-HEMT device with a gate dimension of 1.8 x 200 mu m(2) shows a maximum drain current of as high as 820 mA/mm and a maximum extrinsic transconductance of 320 mS/mm at 300 K. Also, extrinsic transconductance is sustained over a wide range of gate voltages from -2.0 V to 1.8 V. In addition, a high two-terminal gate-drain reverse breakdown voltage of -17 V is obtained. The results obtained show a great potential of the inverted double channel P-HEMT for power applications.
- Keywords
- inverted double channel structure; LP-MOCVD; AlGaAs/InGaAs power HEMT; high current density; large gate voltage swing; high breakdown voltage; DELTA-DOPED GAAS; BREAKDOWN-VOLTAGE; MOCVD; FETS; ALINAS/GAINAS; PERFORMANCE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20778
- DOI
- 10.1143/JJAP.37.1377
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 37, no. 3B, page. 1377 - 1379, 1998-03
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