A Ku-band T-shaped gate GaAs power MESFET with high breakdown voltage for satellite communications
SCIE
SCOPUS
- Title
- A Ku-band T-shaped gate GaAs power MESFET with high breakdown voltage for satellite communications
- Authors
- Lee, JL; Kim, H; Mun, JK; Maeng, SJ
- Date Issued
- 1998-07
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- GaAs power MESFET's with 0.5-mu m T-shaped gate for Ku-band power applications have been developed using a new self-aligned and optical lithography, It displays a maximum current density of 350 mA/mm, an uniform transconductance of 150 mS/mm and a high gate-to-drain breakdown voltage of 35 V. Both the high breakdown voltage and the uniform transconductance were achieved by the new MESFET design incorporating an undoped GaAs cap and a thick lightly doped active layers. The breakdown voltage is the highest one among the values reported on the power devices. The device exhibits 0.61 W/mm power density and 47% power added efficiency with 9.0 dB associated gain at a drain bias of 12 V and an operation frequency of 12 GHz.
- Keywords
- HEMTS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20743
- DOI
- 10.1109/55.701433
- ISSN
- 0741-3106
- Article Type
- Article
- Citation
- IEEE ELECTRON DEVICE LETTERS, vol. 19, no. 7, page. 250 - 252, 1998-07
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