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Characterization of proximity correction in 100-nm-regime X-ray lithography SCIE SCOPUS

Title
Characterization of proximity correction in 100-nm-regime X-ray lithography
Authors
Yi, MSeo, ESeo, YLee, KKim, O
Date Issued
1998-12
Publisher
JAPAN J APPLIED PHYSICS
Abstract
The possibility and usefulness of proximity correction in 100-nm-regime X-ray lithography was examined. Two-dimensional array patterns of around 100 nm linewidth were fabricated by e-beam exposure and subsequent gold electroplating. The mask patterns consist of normal rectangular patterns and shape-modified patterns which are modified by a simple optical proximity correction (OPC)-like method such as the addition of a simple serif at the end of the pattern. Different serifs sizes and pattern shapes were considered. The delineated images printed by normal rectangular mask pattern and shape-modified mask patterns were compared with a target image to be defined on the wafer, and the faithfulness of printed images was determined by measuring the lengths and widths at all the significant points on two-dimensional patterns. The OPC-like mask modification technique had positive effects in improving the fidelity of the printed image in the linewidth range below 150 nm, especially in the reduction of image shortening in array patterns. The optimum serif size depends on the pattern size, pattern density and the process conditions, especially the gap between the mask and wafer In addition, two-dimensional aerial image simulations were performed and compared with experimental results and showed the same results as the experiments.
Keywords
X-ray lithography; image shortening; proximity correction; aerial image simulation; serif; IMAGE
URI
https://oasis.postech.ac.kr/handle/2014.oak/20492
DOI
10.1143/JJAP.37.6824
ISSN
0021-4922
Article Type
Article
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 37, no. 12B, page. 6824 - 6829, 1998-12
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김오현KIM, OHYUN
Dept of Electrical Enginrg
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