A novel higher order extending method in a MESFET channel current model for Volterra series analysis
SCIE
SCOPUS
- Title
- A novel higher order extending method in a MESFET channel current model for Volterra series analysis
- Authors
- Kim, Y; Roh, TM; Kim, B
- Date Issued
- 1999-03-05
- Publisher
- JOHN WILEY & SONS INC
- Abstract
- We propose a new method to find the higher order Taylor series coefficients of a MESFET channel current model for Volterra series analysis from the measured lower order Taylor coefficients at several bias points. Generally, the third-order Taylor expansion is not sufficient to accurately characterize the linear amplifier distortion properties. The channel current model is improved with these additional higher order terms. (C) 1999 John Wiley & Sons, Inc.
- Keywords
- MESFET; nonlinear analysis; channel current; INTERMODULATION DISTORTION; GAAS-MESFETS; AMPLIFIERS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20489
- DOI
- 10.1002/(SICI)1098-2760(19990305)20:5<292::AID-MOP3>3.0.CO;2-W
- ISSN
- 0895-2477
- Article Type
- Article
- Citation
- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 20, no. 5, page. 292 - 295, 1999-03-05
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- There are no files associated with this item.
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