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A novel higher order extending method in a MESFET channel current model for Volterra series analysis SCIE SCOPUS

Title
A novel higher order extending method in a MESFET channel current model for Volterra series analysis
Authors
Kim, YRoh, TMKim, B
Date Issued
1999-03-05
Publisher
JOHN WILEY & SONS INC
Abstract
We propose a new method to find the higher order Taylor series coefficients of a MESFET channel current model for Volterra series analysis from the measured lower order Taylor coefficients at several bias points. Generally, the third-order Taylor expansion is not sufficient to accurately characterize the linear amplifier distortion properties. The channel current model is improved with these additional higher order terms. (C) 1999 John Wiley & Sons, Inc.
Keywords
MESFET; nonlinear analysis; channel current; INTERMODULATION DISTORTION; GAAS-MESFETS; AMPLIFIERS
URI
https://oasis.postech.ac.kr/handle/2014.oak/20489
DOI
10.1002/(SICI)1098-2760(19990305)20:5<292::AID-MOP3>3.0.CO;2-W
ISSN
0895-2477
Article Type
Article
Citation
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, vol. 20, no. 5, page. 292 - 295, 1999-03-05
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김범만KIM, BUM MAN
Dept of Electrical Enginrg
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