Voltage distribution of the narrow disordered NIS interface

Abstract

We present a self-consistent procedure of calculating a voltage distribution near normal metal-insulator-superconductor (NIS) interface in a dirty metal with magnetic impurities. The transversal dimensions of the interface are assumed to be smaller than the London penetration depth. The system of nonequilibrium quasiclassical equation for this realization is linearized in the limit of small current and is solved numerically for different barrier strengths. The differential conductance of the interface is shown to be in the order of the normal state conductance.