A simulation-based semiconductor chip yield model incorporating a new defect cluster index

Abstract

This paper proposes a new cluster index that utilizes the defect location data on a wafer in terms of the coefficient of variation. The proposed cluster index is independent of the chip area and does not require assumptions on the distribution of defects. An extensive simulation is performed under a variety of cluster patterns and a yield prediction modal is derived through the regression analysis to relate the yield with the proposed cluster index and the average number of defects per chip. The performance of the proposed simulation-based yield prediction model is compared with that of the well-known negative binomial model. (C) 1999 Elsevier Science Ltd. All rights reserved.