The effectiveness of a thin refractory metal layer inserted into a Ta film by ion-assisted deposition as a diffusion barrier between copper and silicon
SCIE
SCOPUS
- Title
- The effectiveness of a thin refractory metal layer inserted into a Ta film by ion-assisted deposition as a diffusion barrier between copper and silicon
- Authors
- Kim, JH; Lee, SM; Kwak, JS; Baik, HK; Ryu, HJ; Je, JH
- Date Issued
- 1999-07
- Publisher
- KOREAN PHYSICAL SOC
- Abstract
- In order to increase the failure temperature of a Ta diffusion barrier for Cu, we investigated the effect of adding of a thin refractory metal layer into a Ta film with/without ion bombardment on the Ta diffusion barrier performance in Cu metallization. The insertion of a thin Zr, W, Nb, or V layer into the Ta film improved the barrier properties significantly when the barrier layers were deposited with concurrent ion bombardment. The improvement of Ta diffusion barrier property was attributed to a densification of the grain boundaries in the films and to the formation of two thermally stable sharp interfaces between the Ta and the V by the ion bombardment, thereby retarding the Cu diffusion through Ta/V/Ta films.
- Keywords
- X-RAY MIRRORS; TANTALUM; VLSI
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20338
- ISSN
- 0374-4884
- Article Type
- Article
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 35, page. S349 - S352, 1999-07
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