Crystallization of amorphous precursor of Ba-ferrite film: A real-time synchrotron X-ray scattering study
SCIE
SCOPUS
- Title
- Crystallization of amorphous precursor of Ba-ferrite film: A real-time synchrotron X-ray scattering study
- Authors
- Cho, TS; Doh, SJ; Je, JH; Noh, DY; Moon, TJ
- Date Issued
- 1999-09
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- The crystallization of the amorphous precursor of a Ba-ferrite thin film was studied in real-time synchrotron x-ray scattering experiments. We found that a very thin (similar to 50 Angstrom) epitaxial Fe3O4 sublayer was formed in the as-deposited amorphous precursor grown on sapphire (001), The nucleation of crystalline alpha-Fe2O3 phase from the amorphous precursor started at 300 degrees C and continued at higher annealing temperatures. The mosaic distribution of the alpha-Fe2O3 grains was about 0.67 degrees full-width at half-maximum (FWHM), relatively large compared to that of the Fe3O4 sublayer, The crystallization of the Ba-ferrite phase occurred at 600 degrees C, The Fe3O4 sublayer was transformed from 600 degrees C to extremely well-aligned (0.05 degrees FWHM) alpha-Fe2O3 phase. It is noteworthy that the crystallization of the Ba-ferrite phase occurred during the transformation of the Fe3O4 sublayer to the well-aligned alpha-Fe2O3 grains, The Fe3O4 sublayer might play an important role in the crystallization of amorphous Ba-ferrite film.
- Keywords
- Ba-ferrite film; crystallization; iron oxide phase; Fe3O4 sublayer; synchrotron X-ray scattering; THIN-FILMS; MEDIA; INPLANE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20242
- DOI
- 10.1109/20.800983
- ISSN
- 0018-9464
- Article Type
- Article
- Citation
- IEEE TRANSACTIONS ON MAGNETICS, vol. 35, no. 5, page. 2778 - 2780, 1999-09
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.