GE-INDUCED SURFACE RECONSTRUCTIONS ON THE 4 DEGREES VICINAL SI(100) SURFACE
SCIE
SCOPUS
- Title
- GE-INDUCED SURFACE RECONSTRUCTIONS ON THE 4 DEGREES VICINAL SI(100) SURFACE
- Authors
- Ahn, JR; Kim, CY; Chung, JW
- Date Issued
- 1999-01
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Abstract
- We report results of a combined study of low-energy-electron diffraction (LEED) and Monte Carlo simulations for the Ge-adsorbed single-domain stepped Si(100) surface. The (4 x I)structure, least favored energetically among the (2 x 1) family of the dimer-induced structures, is found to appear on the Ge-adsorbed Si(001) surface in a limited range of temperatures slightly below room temperature. With mild annealing at similar to 370 K, the surface undergoes irreversible transitions initially to a (3 x 1)and then ultimately to a (2 x 1) structure after prolonged annealing. We propose that the (4 x 1) structure consists of an antiferromagnetic arrangement of A-type Ge ad-dimers, which decompose and recombine into C-type ad-dimers for the high-temperature structures upon annealing. In addition, results of Monte Carlo simulations suggest that the (4 x 1) surface is the most stable structure when the signs of the Ge inter-dimer interaction parameters are exactly opposite to those of the c(4 x 2) + p(2 x 1) surface. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.
- Keywords
- semiconductors; surfaces and interfaces; surface electron diffraction; SI AD-DIMERS; SI(001); GROWTH; DIFFUSION; GE(001); ENERGY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/20199
- DOI
- 10.1016/S0038-1098(99)00440-8
- ISSN
- 0038-1098
- Article Type
- Article
- Citation
- SOLID STATE COMMUNICATIONS, vol. 113, no. 2, page. 83 - 87, 1999-01
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