Effects of hydrogen and deuterium annealing on plasma process induced damages
SCIE
SCOPUS
- Title
- Effects of hydrogen and deuterium annealing on plasma process induced damages
- Authors
- Ahn, CG; Kim, JH; Kim, YK; Lee, YH; Kang, B
- Date Issued
- 2000-04
- Publisher
- JAPAN J APPLIED PHYSICS
- Abstract
- For n-channel metal-oxide semiconductor field effect transistor(MOSFET) devices with thin gate oxide, the effects of low temperature hydrogen and deuterium annealing on plasma process-induced damages are examined. The test devices were first exposed to the plasma during poly-Si gate or metal processes, and then the device characteristics were measured with the charge pumping method. It was observed that the metal process induced more interface traps than the poly-Si gate process. D-2 annealing was more effective in curing the interface damages than H-2 annealing, and the strength to resist ac electrical stress was enhanced significantly after D-2 annealing. The stability of interface properties was increased with the annealing temperature and time. It is concluded that the latent damages, which appear after electrical stress, originate from the plasma. process-induced damages that were unintentionally passivated by hydrogen atoms during subsequent processes.
- Keywords
- PPID; deuterium annealing; latent damage; ac stress; charge pumping; HOT-ELECTRON DEGRADATION; OXIDE-SEMICONDUCTOR TRANSISTORS; REDUCTION
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19884
- DOI
- 10.1143/JJAP.39.2030
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 39, no. 4B, page. 2030 - 2034, 2000-04
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