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Dose and shape modification proximity effect correction for forward-scattering range scale features in electron beam lithography SCIE SCOPUS

Title
Dose and shape modification proximity effect correction for forward-scattering range scale features in electron beam lithography
Authors
Seo, EKim, O
Date Issued
2000-12
Publisher
INST PURE APPLIED PHYSICS
Abstract
For forward-scattering range scale features (alpha -scale features), the exposure contrast has too small a value to delineate the alpha -scale features using conventional dose modification proximity effect correction (PEC) in electron beam lithography. To delineate the alpha -scale features, the exposure contrast should be increased by shape modification. Therefore, we propose a dose-and-shape-modification PEC for alpha -scale features. The proposed PEC consists of two steps. The first step is the conventional dose modification PEC for the backscattering effect. The second step is the shape modification and dose compensation for the forward-scattering effect. A significant advantage of the proposed PEC is its low cost in terms of computation time, because shape modification and dose compensation for forward scattering are noniterative computations which do not consider the backscattering effect. Considering the exposure contrast, a separation distance larger than 2 alpha between patterns is sufficient to delineate the alpha -scale features in the case of an equal lines-and-spaces (L&S) array. Experimental results are consistent with the simulation results, within a margin of error of approximately 5%. Using the proposed PEG, a 1.32 alpha L&S array was delineated.
Keywords
electron beam lithography; proximity effect correction; dose modification; shape modification; forward scattering; exposure contrast; SCHEME; MASK
URI
https://oasis.postech.ac.kr/handle/2014.oak/19692
DOI
10.1143/JJAP.39.6827
ISSN
0021-4922
Article Type
Article
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 39, no. 12B, page. 6827 - 6830, 2000-12
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김오현KIM, OHYUN
Dept of Electrical Enginrg
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