Fabrication of an X-band amplifier using a multilayer process
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SCOPUS
KCI
- Title
- Fabrication of an X-band amplifier using a multilayer process
- Authors
- Ryu, S; Im, J; Kang, S; Kim, B
- Date Issued
- 2001-07
- Publisher
- KOREAN PHYSICAL SOC
- Abstract
- A multilayer process based on polyimide has been developed, and a passive component library for the process has been established. A two-stage amplifier using these passive components has been designed and fabricated. For the design, three layers of polyimide were used for capacitors and microstrip lines. The reactive ion etching: process for via-hole connection through polyimide was used. The main circuit was fabricated on the top layer. The fabricated amplifier showed a gain of 11.5 dB at 8.5 GHz. Also the chip size is considerably reduced in size because of the multilayer structure.
- Keywords
- POLYIMIDE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19481
- ISSN
- 0374-4884
- Article Type
- Article
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 39, no. 1, page. 4 - 7, 2001-07
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