Formation of high-temperature stable Co-silicide from Co0.92Ta0.08/Si systems
SCIE
SCOPUS
- Title
- Formation of high-temperature stable Co-silicide from Co0.92Ta0.08/Si systems
- Authors
- Lee, DH; Ko, DH; Ku, JH; Choi, S; Fujihara, K; Kang, HK; Oh, SH; Park, CG; Lee, HJ
- Date Issued
- 2001-04
- Publisher
- INST PURE APPLIED PHYSICS
- Abstract
- We investigated the formation and thermal stability of Co-silicide films using Co-Ta alloy films on (100) Si substrates. Co-Ta alloy films were deposited by direct current (DC) magnetron sputtering using Co and Ta targets. The content of Ta in the films was controlled at 8 at.%. The Co-silicide films were formed through a rapid thermal annealing (RTA) process in N-2 ambient. Compared with the Co/Si systems, the formation Of CoSi2 occurs at higher temperatures in Co0.92Ta0.08/Si systems. X-Ray diffractometry (XRD) analyses showed the presence of strong (200)-preferred orientation in the Co-silicide films formed from Co0.92Ta0.08/Si systems. We observed that Co-silicide films formed from Co0.92Ta0.08/Si systems maintained low sheet resistance values upon annealing at 950 degreesC, while those of Co-silicide from Co/Si systems increased significantly. The improvement of the thermal stability of the Co-silicide films from Co0.92Ta0.08/Si systems is due to the formation of Ta-compounds such as the TaSi2 phase at the grain boundaries or at the surface of the CoSi2 films.
- Keywords
- Co-Ta alloy; Co0.92Ta0.08/Si; agglomeration; Co-silicide; thermal stability; CoSi2; EPITAXIAL COSI2; POLYCRYSTALLINE SILICON; THERMAL-STABILITY; BILAYER; OXIDE; ALLOY; THICKNESS; BARRIER; GROWTH; FILMS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19422
- DOI
- 10.1143/JJAP.40.2712
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 40, no. 4B, page. 2712 - 2716, 2001-04
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