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Photoluminescent properties of Se-doped GaN SCIE SCOPUS
- Title
- Photoluminescent properties of Se-doped GaN
- Authors
- Yi, GC; Il Park, W
- Date Issued
- 2001-07
- Publisher
- INST PURE APPLIED PHYSICS
- Abstract
- The nature of Se donors in GaN was investigated using temperature dependent photoluminescence spectroscopy. Near-bandedge emission of the doped films was investigated at temperatures between 15-300 K. Based on the temperature dependence of the near-bandedge emission, the Se donor level in GaN was estimated to be 38 +/- 4 meV below the conduction band minimum.
- Keywords
- Se-doped GaN; photoluminescence spectroscopy; metal-organic vapor phase epitaxy; CHEMICAL-VAPOR-DEPOSITION; N-TYPE GAN; ENERGY; FILMS; DONORS; MG
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 40, no. 7, page. 4470 - 4474, 2001-07
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Related Researcher
- 이규철YI, GYU CHUL
- Dept of Materials Science & Enginrg