Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO(0 <= x <= 0.49) thin films
SCIE
SCOPUS
- Title
- Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO(0 <= x <= 0.49) thin films
- Authors
- Park, WI; Yi, GC; Jang, HM
- Date Issued
- 2001-09-24
- Publisher
- AMER INST PHYSICS
- Abstract
- High-quality Zn1-xMgxO(0.00 less than or equal tox less than or equal to0.49) thin films were epitaxially grown at 500-650 degreesC on Al2O3(00.1) substrates using metalorganic vapor-phase epitaxy. By increasing the Mg content in the films up to 49 at. %, the c-axis constant of the films decreased from 5.21 to 5.14 Angstrom and no significant phase separation was observed as determined by x-ray diffraction measurements. Furthermore, the near-band-edge emission peak position showed blueshifts of 100, 440, and 685 meV at Mg content levels of 9, 29, and 49 at. %, respectively. Photoluminescent properties of the alloy films are also discussed. (C) 2001 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19395
- DOI
- 10.1063/1.1405811
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 79, no. 13, page. 2022 - 2024, 2001-09-24
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