Electrical spin injection in GaAs/AlGaAs quantum-well LEDs
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- Title
- Electrical spin injection in GaAs/AlGaAs quantum-well LEDs
- Authors
- Cheong, HD; Jeong, YH; Kioseoglou, G; Petrou, A; Park, YD; Bennett, BR; Jonker, BT
- Date Issued
- 2001-09
- Publisher
- KOREAN PHYSICAL SOC
- Abstract
- We have studied the electroluminescence spectra resulting from spin injection in several ZnMnSe/AlGaAs(n)/GaAs/AlGaAs(p) light-emitting diodes(LEDs) as a function of magnetic field and temperature in the Faraday geometry. The top ZnMnSe layer through which electrons are injected into the GaAs well acts as a spin aligner due to its large conduction band spin splitting. Electrons leave the ZnMnSe layer predominantly in the m(s) = -1/2 spin state; the heavy holes which participate in the elh, transition are injected into the GaAs well from the substrate with equal numbers in the m(s) = +3/2 and m(s) = -3/2 spin states. As a result, the emitted electroluminescence associated with the e(1)h(1) exciton is strongly circularly polarized. The maximum value of the optical polarization P at T = 4.2 K is 0.5 which corresponds to 75% of the injected electrons in the m(s) = -1/2 state.
- Keywords
- PHOTOLUMINESCENCE; INTERFACE; DEVICE; GAAS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19393
- ISSN
- 0374-4884
- Article Type
- Article
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, vol. 39, no. 3, page. 568 - 571, 2001-09
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