High-speed AlGaAs/GaAs HBTs with reduced base-collector capacitance
SCIE
SCOPUS
- Title
- High-speed AlGaAs/GaAs HBTs with reduced base-collector capacitance
- Authors
- Kim, W; Lee, KH; Chung, MC; Kang, JC; Kim, B
- Date Issued
- 2001-09-27
- Publisher
- IEE-INST ELEC ENG
- Abstract
- A new layout for high-speed AlGaAs/GaAs heterojunction bipolar transistors (HBTs) is presented. The layout is horseshoe shaped and designed to simultaneously reduce base resistance (R-B) and base-collector capacitance (C-BC). A horseshoe-shaped HBT and a conventional single-finger HBT with the same emitter, width of 2 mum were fabricated and tested. The reduction of R-B and C-BC using the horseshoe-shaped HBT resulted in a 25% improvement of the maximum oscillation frequency (f(max) = 130 GHz).
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19354
- DOI
- 10.1049/el:20010835
- ISSN
- 0013-5194
- Article Type
- Article
- Citation
- ELECTRONICS LETTERS, vol. 37, no. 20, page. 1259 - 1261, 2001-09-27
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- There are no files associated with this item.
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