Photoluminescent properties of ZnO thin films grown on SiO2/Si(100) by metal-organic chemical vapor deposition
SCIE
SCOPUS
- Title
- Photoluminescent properties of ZnO thin films grown on SiO2/Si(100) by metal-organic chemical vapor deposition
- Authors
- Park, WI; Yi, GC
- Date Issued
- 2001-10
- Publisher
- MINERALS METALS MATERIALS SOC
- Abstract
- We report on the photoluminescent (PL) properties of ZnO thin films grown on SiO2/Si(100) substrates using low pressure metal-organic chemical vapor deposition. The growth temperature of the films was as low as 400 degreesC. From the PL spectra of the films at 10-300 K, strong PL peaks due to fi-ee and bound excitons were observed. The origin of the near bandedge emission peaks was investigated measuring temperature-dependent PL spectra. In addition, the ZnO films demonstrated a stimulated emission peak at room temperature. Upon illumination with an excitation density of 1 MW/cm(2), a strong, sharp peak was observed at 3.181 eV.
- Keywords
- ZnO; metal organic chemical vapor deposition (MOCVD); photoluminescence; SiO2/Si substrate; stimulated emission
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19347
- DOI
- 10.1007/s11664-001-0127-7
- ISSN
- 0361-5235
- Article Type
- Article
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, vol. 30, no. 10, page. L32 - L35, 2001-10
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