Precipitation in As-ion-implanted and annealed InAs
SCIE
SCOPUS
- Title
- Precipitation in As-ion-implanted and annealed InAs
- Authors
- Kim, SJ; Han, H
- Date Issued
- 2001-11
- Publisher
- INST PURE APPLIED PHYSICS
- Abstract
- Low-energy As-ion-implanted InAs was examined using double-crystal X-ray diffraction and transmission electron microscopy. For uniform defect distribution, multiple implantations were made at 0.05-0.4 MeV with 4 x 10(14)-5 x 10(15) ions/cm(2). After annealing at 600 degreesC for 20 min, As precipitates were observed, and the implantation-induced strain was significantly reduced, showing the recovery of crystallinity. The density of the As precipitates was 7.4 x 10(16) cm(-3) and the mean diameter was 55 Angstrom, which corresponds to a volume fraction of 1.1%.
- Keywords
- arsenic ion-implanted InAs; arsenic precipitates; DCXRD; TEM; CARRIER LIFETIME; GAAS
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19285
- DOI
- 10.1143/JJAP.40.6323
- ISSN
- 0021-4922
- Article Type
- Article
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, vol. 40, no. 11, page. 6323 - 6324, 2001-11
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