Precipitation in As-ion-implanted and annealed InAs

Abstract

Low-energy As-ion-implanted InAs was examined using double-crystal X-ray diffraction and transmission electron microscopy. For uniform defect distribution, multiple implantations were made at 0.05-0.4 MeV with 4 x 10(14)-5 x 10(15) ions/cm(2). After annealing at 600 degreesC for 20 min, As precipitates were observed, and the implantation-induced strain was significantly reduced, showing the recovery of crystallinity. The density of the As precipitates was 7.4 x 10(16) cm(-3) and the mean diameter was 55 Angstrom, which corresponds to a volume fraction of 1.1%.