Residual stress behavior in methylsilsesquioxane-based dielectric thin films
SCIE
SCOPUS
- Title
- Residual stress behavior in methylsilsesquioxane-based dielectric thin films
- Authors
- Oh, W; Shin, TJ; Ree, M; Jin, MY; Char, K
- Date Issued
- 2001-01
- Publisher
- TAYLOR & FRANCIS LTD
- Abstract
- Residual stress of methylsilsequioxane film, which was spin-coated on silicon substrate and followed by soft-baking, was measured in-situ during curing and subsequent cooling with varying processing conditions. The thickness and refractive index of the cured films were measured using ellipsometry. Their structure was also examined by Xray diffraction.
- Keywords
- methylsilsesquioxane; thin film; low dielectric; residual stress; thermal stress; refractive index; crack; craze; X-ray diffraction; POLYIMIDES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19265
- DOI
- 10.1080/10587250108024768
- ISSN
- 1058-725X
- Article Type
- Article
- Citation
- MOLECULAR CRYSTALS AND LIQUID CRYSTALS, vol. 371, page. 397 - 402, 2001-01
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.