Temperature-induced metal-insulator transition on a triangular binary system: Sn/Si(111)
SCIE
SCOPUS
- Title
- Temperature-induced metal-insulator transition on a triangular binary system: Sn/Si(111)
- Authors
- Ahn, JR; Lee, SS; Kim, ND; Chung, JW
- Date Issued
- 2002-02
- Publisher
- SPRINGER-VERLAG
- Abstract
- We report that a metallic Sn/Si(1 1 1 )-root3 x root3-R30degrees surface undergoes a metal-semiconductor transition upon annealing the surface above the transition temperature of 760degreesC. The unique loss peak initially observed weakly from the metallic surfaces in our high-resolution electron-energy-loss spectra shifts gradually towards higher loss energy with increasing temperature. The peak eventually reaches 2.0 eV, revealing a band gap of about 1.2 eV at 810degreesC. We find that a two-dimensional (2D) disordered alloy model, where the semiconducting surface is a 2D mixture of Sn and Si substitutions, is quite consistent with our experimental data.
- Keywords
- CHARGE-DENSITY-WAVE; X-RAY; SURFACE; PHASE; SN/GE(111); SI(111); SN; RECONSTRUCTIONS; ADATOMS; STATES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19179
- DOI
- 10.1007/S00339010107
- ISSN
- 0947-8396
- Article Type
- Article
- Citation
- APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, vol. 74, no. 2, page. 299 - 302, 2002-02
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