Analysis of nonlinear behavior of power HBTs
SCIE
SCOPUS
- Title
- Analysis of nonlinear behavior of power HBTs
- Authors
- Kim, W; Kang, S; Lee, K; Chung, M; Kang, J; Kim, B
- Date Issued
- 2002-07
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- To accurately understand the linear characteristics of a heterojunction bipolar transistor (HBT), we developed an analytical nonlinear HBT model using Volterra-series analysis. The model considers four nonlinear components: r(pi), C-diff, C-dep1, and g(m). It shows that nonlinearities of r(pi) and C-diff are almost completely canceled by g(m) nonlinearity at all frequencies. The residual g, nonlinearity is highly degenerated by input circuit impedances. Therefore, r(pi), C-diff, C-dep1, and g(m) nonlinearities generate less harmonics than C-bc nonlinearity. If C-bc is linearized, g(m) is the main nonlinear source of HBT, and C-dep1 becomes very important at a high frequency. The degeneration resistor RE is more effective than R-B for reducing g(m) nonlinearity. This analysis also shows the dependency of the third-order intermodulation (IM3) on the terminations of the source second harmonic impedances. The IM3 of HBT is significantly reduced by setting the second harmonic impedances of Z(S), 2omega(2) = 0 and Z(S), omega(2)-omega(1) = 0.
- Keywords
- heterojunction bipolar transistors; intermodulation distortion; nonlinearity; HETEROJUNCTION BIPOLAR-TRANSISTORS; ALGAAS/GAAS HBTS; LINEARITY; INTERMODULATION; DISTORTION; DESIGN
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/19002
- DOI
- 10.1109/TMTT.2002.800396
- ISSN
- 0018-9480
- Article Type
- Article
- Citation
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, vol. 50, no. 7, page. 1714 - 1722, 2002-07
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