Fatigue-free lead zirconate titanate (Pb(Zr,Ti)O-3)-based capacitors co-modified by lanthanum and lithium for nonvolatile memories
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SCOPUS
- Title
- Fatigue-free lead zirconate titanate (Pb(Zr,Ti)O-3)-based capacitors co-modified by lanthanum and lithium for nonvolatile memories
- Authors
- Shannigrahi, SR; Lee, SH; Jang, HM
- Date Issued
- 2002-08
- Publisher
- AMER CERAMIC SOC
- Abstract
- Pb-0.98(La1-xLix)(0.02)(Zr0.55Ti0.45)O-3 (PLLZT with 0.1 less than or equal to x less than or equal to 0.7) thin films were sol-gel-grown on Pt(111)/Ti/SiO2/Si substrates, employing a thin lead zirconate titanate (PZT) template layer. Films annealed at >550degreesC showed a highly [111]-oriented preferential growth. Typical values of the switchable remanent polarization (2P(r)) and the coercive field (E-c) of the PLLZT/PZT/Pt film capacitor for x = 0.3 were 50 muC/cm(2) and 39 kV/cm, respectively, at 5 V. All the PLLZT/PZT/Pt capacitors (for 0.1 less than or equal to x less than or equal to 0.7) exhibited fatigue-free behavior up to 6.5 x 10(10) switching cycles, a quite stable charge retention profile with time, and high 2P(r) values, all which assure their suitability for nonvolatile ferroelectric memories.
- Keywords
- FERROELECTRIC THIN-FILMS; ELECTRICAL-PROPERTIES
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18946
- DOI
- 10.1111/j.1151-2916.2002.tb00417.x
- ISSN
- 0002-7820
- Article Type
- Article
- Citation
- JOURNAL OF THE AMERICAN CERAMIC SOCIETY, vol. 85, no. 8, page. 2122 - 2124, 2002-08
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