Structural and electronic properties of the Si-rich 6H-SiC(0001) surface
SCIE
SCOPUS
- Title
- Structural and electronic properties of the Si-rich 6H-SiC(0001) surface
- Authors
- Ahn, JR; Lee, SS; Kim, ND; Hwang, CG; Min, JH; Chung, JW
- Date Issued
- 2002-09-20
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- We have investigated structural and electronic properties of the Si-rich 6H-SiC(0 0 0 1)-3 x 3 surface and the clean root3 x root3R30degrees surface with high resolution electron-energy-loss spectroscopy. We find that the 3 x 3 and the root3 x root3R30degrees surfaces prepared at 980 degreesC are 2D Mott-Hubbard insulators primarily by evaluating the effective on-site Coulomb repulsion energy (U*) energy directly from our electron-energy-loss spectroscopy data. We find that a criterion of U* much greater than t* (t*: intersite hopping energy) is well satisfied for these surfaces thus confirming the typical nature of a Mott-Hubbard insulator. (C) 2002 Elsevier Science B.V. All rights reserved.
- Keywords
- electron energy loss spectroscopy (EELS); low energy electron diffraction (LEED); surface electronic phenomena (work; function, surface potential, surface states etc.); silicon carbide; insulating surfaces; MOTT-HUBBARD INSULATOR; SCANNING TUNNELING SPECTROSCOPY; R30-DEGREES RECONSTRUCTION; RESOLVED INVERSE; SI(111) SURFACE; GROUND-STATE; SIC(0001); PHOTOEMISSION; DIFFRACTION
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18897
- DOI
- 10.1016/S0039-6028(02)02088-5
- ISSN
- 0039-6028
- Article Type
- Article
- Citation
- SURFACE SCIENCE, vol. 516, no. 3, page. L529 - L534, 2002-09-20
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.