Detection of a Pd-Ni interlayer at the Pd/Ni interface of an epitaxial Pd film on cube textured nickel (001)
SCIE
SCOPUS
- Title
- Detection of a Pd-Ni interlayer at the Pd/Ni interface of an epitaxial Pd film on cube textured nickel (001)
- Authors
- Je, JH; You, H; Cullen, WG; Maroni, VA; Ma, B; Koritala, RE; Thieme, C
- Date Issued
- 2002-12-15
- Publisher
- ELSEVIER SCIENCE BV
- Abstract
- We studied the microstructure of a Pd overlayer deposited on a cube textured Ni(0 0 1) substrate using synchrotron X-ray scattering. We find the existence of an epitaxial Pd-Ni interlayer between the epitaxial Pd layer and the Ni substrate. The Pd-Ni interlayer, which is compressively strained in a manner similar to the Pd overlayer, seemingly acts to relieve the strain at the Pd/Ni interface caused by the Pd-Ni lattice mismatch. The Ni mosaic distribution of our samples is multiply spiked with a rocking angle spread of similar to16degrees, which reconciles the previously reported observation of saw tooth peaks on top of a Gaussian distribution for a similarly prepared I'd on Ni specimen. The observed sharpening of the mosaic distributions for the Pd(0 0 2) grains (full-width at half-maximum (FWHM) = 1.95degrees) and for the (0 0 2) grains of Pd-Ni interlayer (FWHM = 3.0degrees) indicates that the Pd and Pd-Ni(0 0 2) layers conform to the surface morphology instead of to the (0 0 1) crystallographic planes of Ni-substrate grains. (C) 2002 Elsevier Science B.V. All rights reserved.
- Keywords
- Pd/Ni; buffer layer; biaxial texture; cube-textured Ni substrates; CRITICAL-CURRENT DENSITY; SUPERCONDUCTING TAPES; COATED CONDUCTORS; BUFFER LAYERS; GROWTH; EVAPORATION; DEPOSITION; OXIDE
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18817
- DOI
- 10.1016/S0921-4534(02)01325-4
- ISSN
- 0921-4534
- Article Type
- Article
- Citation
- PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, vol. 383, no. 3, page. 241 - 246, 2002-12-15
- Files in This Item:
- There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.