Electrical properties of metal contacts on laser-irradiated n-type GaN
SCIE
SCOPUS
- Title
- Electrical properties of metal contacts on laser-irradiated n-type GaN
- Authors
- Jang, HW; Kim, JK; Lee, JL; Schroeder, J; S; s, T
- Date Issued
- 2003-01-27
- Publisher
- AMER INST PHYSICS
- Abstract
- The electrical properties of metal contacts on laser-irradiated n-type GaN were investigated using synchrotron radiation photoemission spectroscopy. A KrF excimer laser pulse of 600 mJ/cm(2) onto GaN led to a decrease in the Ni Schottky barrier height from 0.91 to 0.47 eV, resulting in the formation of a nonalloyed Ohmic contact with a specific contact resistivity of 1.7x10(-6) Omega cm(2). Metallic Ga decomposed from GaN by laser irradiation was transformed into GaOx, playing a role in promoting outdiffusion of N atoms. A large number of N vacancies were produced, forming a degenerated GaN layer near the surface, resulting in the good Ohmic contact. (C) 2003 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18727
- DOI
- 10.1063/1.1537515
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 82, no. 4, page. 580 - 582, 2003-01-27
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