Effect of microstructural change on magnetic property of Mn-implanted p-type GaN
SCIE
SCOPUS
- Title
- Effect of microstructural change on magnetic property of Mn-implanted p-type GaN
- Authors
- Baik, JM; Jang, HW; Kim, JK; Lee, JL
- Date Issued
- 2003-01-27
- Publisher
- AMER INST PHYSICS
- Abstract
- A dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequent annealing. The ferromagnetic property was obtained after annealing at 800 degreesC. This was attributed to the formation of Ga-Mn magnetic phases. Higher temperature annealing at 900 degreesC reduced the ferromagnetic signal and produced antiferromagnetic Mn-N compounds such as Mn6N2.58 and Mn3N2, leaving N vacancies. This provides evidence that N vacancies play a critical role in weakening the ferromagnetic property in the Mn-implanted GaN. (C) 2003 American Institute of Physics.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18726
- DOI
- 10.1063/1.1541111
- ISSN
- 0003-6951
- Article Type
- Article
- Citation
- APPLIED PHYSICS LETTERS, vol. 82, no. 4, page. 583 - 585, 2003-01-27
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