Effect of surface treatment on Schottky barrier height of p-type GaN
SCIE
SCOPUS
- Title
- Effect of surface treatment on Schottky barrier height of p-type GaN
- Authors
- Kim, JK; Lee, JL
- Date Issued
- 2003-03
- Publisher
- ELECTROCHEMICAL SOC INC
- Abstract
- The chemical bonding state and atomic composition at the surface of p-type GaN were studied by synchrotron radiation photo-emission spectroscopy. Ga-related oxides existed even after surface treatment using HCl solution, causing pinning of the surface Fermi level (E-F) at 0.62 eV above valence band maximum (E-V). Meanwhile, aqua regia treatment is effective in removing the surface oxide, resulting in the movement of the Fermi level toward E-V (E-F - E-V = 0.30 eV). This resulted from the existence of Ga vacancies underneath the surface oxide. As a result, the slope in the plot of Schottky barrier height with the metal work function was increased. (C) 2003 The Electrochemical Society.
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18680
- DOI
- 10.1149/1.1544637
- ISSN
- 0013-4651
- Article Type
- Article
- Citation
- JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 150, no. 3, page. G209 - G211, 2003-03
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