A fully matched N-way Doherty amplifier with optimized linearity
SCIE
SCOPUS
- Title
- A fully matched N-way Doherty amplifier with optimized linearity
- Authors
- Yang, YG; Cha, J; Shin, B; Kim, B
- Date Issued
- 2003-03
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGI
- Abstract
- This paper presents a new fully matched N-way Doherty amplifier. The basic principles of operation and important features are described. For the experimental verification, 2.14-GHz Doherty amplifiers,having two-, three-, and four-way structures are implemented using silicon LDMOSFETs and tested using down-link WCDMA signal. The linearity performances of the two-, three-, and four-way Doherty amplifiers are optimized for better efficiency versus linearity by a bias adjustment of the peaking amplifiers. For, simultaneously improving the efficiency and linearity to achieve maximum efficiency versus linearity, the gate biases of the peaking amplifiers for the N-way Doherty amplifier are optimized. As a result, the efficiency versus linearity characteristics are drastically improved by N-way extension of the Doherty amplifier.
- Keywords
- adjacent channel leakage ratio (ACLR); efficiency; linearity; microwave Doherty amplifier; power amplifiers; WCDMA; HIGH-EFFICIENCY
- URI
- https://oasis.postech.ac.kr/handle/2014.oak/18595
- DOI
- 10.1109/TMTT.2003.808713
- ISSN
- 0018-9480
- Article Type
- Article
- Citation
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, vol. 51, no. 3, page. 986 - 993, 2003-03
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